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Spin injection from ferromagnetic Fe contacts into GaAs/AlGaAs spin LEDs – Athos Petrou

Date: Mon. September 13th, 2004, 12:30 pm-1:30 pm
Location: Rockefeller 221

Electron spin injection efficiencies up to 40% have been obtained in Fe/AlGaAs(n) Schottky barriers. The spin polarized electrons are collected by a GaAs well and recombine with unpolarized holes. The optical polarization of the emitted excitonic electroluminescence yields a direct measurement of the electron spin polarization in the well. We will concentrate on the following aspects of the spin injection process in this system: a. Phonon assisted recombination b. The effect of confined electrons in the GaAs quantum well c. The transition from a bulk-like three-dimensional to a two-dimensional regime in wide well spin LEDs

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