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Resonant charge carrier tunneling in nanocrystalline Si/amorphous SiO2 superlattices – Volodimyr Duzhko

Date: Mon. November 1st, 2004, 12:30 pm-1:30 pm
Location: Rockefeller 221

Electronic transport and charge carrier trapping in the nanocrystalline Si/amorphous SiO2 superlattices were investigated by impedance spectroscopy, dc photoconductivity, and transient photocurrent measurements. The method for evaluation of the density of interface traps from the impedance spectroscopy measurements was developed to controll the quality of the superlattices. Transport of charge carrier in the superlattices at low temperatures was found to be the resonant tunneling of holes between quantum confined states of the valence band of Si nanocrystals. The measured electronic structure of the valence band of Si nanocrystal is in good agreement with the TB calculations. Application of the nanocryslalline Si/amorphous SiO2 superlattices to non-volatile memory cells will be discussed.

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