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Point defects in ZnGeP2 – Walter Lambrecht

Date: Mon. February 27th, 2006, 12:30 pm-1:30 pm
Location: Rockefeller 221

ZnGeP2 is a semiconductor material used in nonlinear optical frequency conversion. To advance these applications it is necessary to gain a better understanding of the native point defects in this material. I will present results of our studies of the basic electronic structure of the main defects and their interactions and compare them with available experimental data mostly from electron paramagnetic resonance studies. One problem we have not yet fully resolved is the nature of the Zn-vacancy, which according to experimental data shows a distorted structure while local density functional calculations indicates an undistorted structure is preferred in energy. Possible ways to resolve this discrepancy will be discussed.

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