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Philip Feng (University of Florida)

Date: Mon. November 6th, 2023, 12:45 pm-1:45 pm
Location: Rock 221 (Foldy) & Zoom

Atomic Layer Nanoelectromechanical Systems (NEMS)
for Classical and Quantum Signal Transduction

Philip Feng
Department of Electrical & Computer Engineering, University of Florida

(Respecting the speaker’s preference, the seminar was not recorded)

Abstract: Emerging atomically thin semiconductors (such as transition metal dichalcogenides (TMDCs), phosphorene, silicene), along with their heterostructures (particularly with graphene and hexagonal boron nitride (h-BN) layers), offer compelling platforms for creating new resonant nanoelectromechanical systems (NEMS) for multiphysics transducers, where the unconventional properties of these crystals can be harnessed for engineering both classical and quantum signal processing and sensing schemes.  In this presentation, I will describe some of my research group’s latest endeavors and results on advancing resonant NEMS based on 2D materials and van der Waals heterostructures.  After reviewing the fundamentals of resonant 2D NEMS with their linear and nonlinear dynamic characteristics, I shall demonstrate examples of how the special properties of these 2D structures have led to new device functions and performance beyond conventional NEMS, particularly, the strong electromechanical coupling and highly efficient signal transduction endowed to 2D NEMS.  Toward quantum engineering, atomistic defects in ultrawide-bandgap h-BN crystal support intriguing quantum emitters (QEs).  Built upon our earlier experiences in SiC photonics and 2D devices, we explore these platforms and their hybrid integration, toward developing quantum transduction and information processing functions in chip-scale integrated systems.  

BioSketch: Philip Feng is a Professor in ECE and Graduate Faculty in Physics at University of Florida. Earlier he was the T.L. & D.J. Schroeder Associate Professor in EECS at CWRU. His research is primarily focused on emerging semiconductor devices and integrated micro/nanoscale systems, especially those in advanced semiconductors (SiC & other WBG), 2D materials and heterostructures, and their heterogeneous integration with mainstream electronic and photonic technologies. Feng received his Ph.D. in EE from Caltech in 2007. He has graduated 13 Ph.D. students (now 4 are faculty, 9 in semiconductor/IT industry) and mentored 8 postdoc associates and several visiting scholars. He has supervised 15 M.S. students (with thesis or project), and >20 undergraduates through senior project, thesis, or NSF REU programs (including 2 NSF GRFP recipients). His other awards include the NAE Grainger Foundation Frontiers of Engineering (FOE) Award, the NSF CAREER Award, the Presidential Early Career Award for Scientists and Engineers (PECASE), and several Best Paper Awards (with his students) at IEEE and other international conferences. He has served for IEEE IEDM/MEMS/Transducers/IFCS, and was a chair for IEEE MEMS 2021.

Relevant References: 

  • Yousuf, Lee, Shaw, Feng, “Phononic Frequency Combs in Atomically Thin NEMS Resonators…”, JMEMS 32, 335-346 (2023).
  • Ye, Islam, Wang, Guo, Feng, “Phase Transition of MoTe2 in van der Waals Hetero NEMS…”, Small 19, 2205327 (2023).
  • Kaisar, Lee, Li, Shaw, Feng, “Nonlinear Stiffness & Nonlinear Damping in 2D NEMS…”, Nano Letters 22, 9831-9838 (2022).
  • Yang, Yousuf, Feng, et al., “Raman Spectroscopic Probe for Nonlinear MoS2 NEMS…” Nano Letters 22, 5780-5787 (2022).
  • Lee, Shaw, Feng, “Giant Parametric Amplification & Spectral Narrowing in Atomically…” Phys. Rev. 9, 011404 (2022).
  • Lee, LaHaye, Feng, “Design of Strongly Nonlinear Graphene NEMS in Quantum…”, Phys. Lett. 120, 014001 (2022).
  • Ye, Islam, Feng, “Ultrawide Frequency Tuning of Atomic Layer…”, Nano Letters 21, 5508-5515 (2021).
  • Wang, Lee, Berezovsky, Feng, “Cavity QED Design with SPEs in h-BN”, Phys. Lett. 118, 244003 (2021).
  • Wang, Lee, Feng, et al., “Hexagonal Boron Nitride Phononic Crystal Waveguides”, ACS Photonics 6, 3225-3232 (2019).
  • Lee, Wang, Feng, et al., “Electrically Tunable Single & Few-Layer MoS2…”, Science Advances 4, eaao6653 (2018).

Host: Xuan Gao

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