Oxide-semiconductor materials for quantum computation – Jeremy Levy

Date: Mon. November 3rd, 2003, 12:30 pm-1:30 pm
Location: Rockefeller 221

I will describe the goals and activities of our Center for Oxide-Semiconductor Materials for Quantum Computation (COSMQC, http://cosmqc.net). In our proposed architecture, quantum information is stored in electron spins, which form the basis for qubits. Spin-polarized electrons are created in Ge/Si quantum dots using optical orientation. Fast optical gating of Zeeman (one-qubit) and Heisenberg (two-qubit) interactions proceeds via optical rectification in an epitaxial ferroelectric. This approach takes advantages of native excitations and interactions in the solid state: (i) electron spins, charges, and photons for initialization and readout, (ii) quantum-mechanical (Heisenberg, Zeeman, spin-orbit) and classical (magnetic, electric, optical intensity) couplings for quantum gating, and (iii) bandgap engineering for preserving long coherence times (semiconductor bandgaps, 3D quantum confinement, spin gaps). Recent results from COSMQC will be presented, as well as an overview of ongoing work and future directions.