InN and ZnO: Unexpected Commonalities – Steven Durbin
Date: Mon. February 7th, 2011, 12:30 pm-1:30 pmLocation: Rockefeller 221
InN is an infrared bandgap semiconductor (although it hasn’t always been that way); ZnO is an ultraviolet bandgap material used in applications from gas sensors to breakfast cereals. Surprisingly, these ostensibly disparate materials are more closely related than we might think: for both, p-type doping is problematic, the surface exhibits significant electron accumulation, and undoped samples are characterized by a large background electron concentration. In this talk I will describe some of our work to date geared towards developing a better understanding of these and closely related materials, which have significant device potential for a large variety of applications.