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Electromechanical coupling effects in semiconductor heterostructures – Lok C. Lew Yan Voon

Date: Mon. October 2nd, 2006, 12:30 pm-1:30 pm
Location: Rockefeller 221

Electromechanical coupling effects are known to significantly impact the physical properties of wurtzite (nitrides, ZnO, …) semiconductor nanostructure devices. However, there has not been to date a systematic study of the fully-coupled multiphysics problem and there are discrepancies within and between experimental and theoretical studies. We present a systematic study of various contributions to the problem for quantum-well structures. Some of the results obtained so far include a resolution of discrepancies among theoretical calculations and the original study of dynamic and nonlinear piezoelectric effects.

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