Near-Zero Field Magnetic Resonance Analysis of SiC devices at NASA’s Quantum Sensing and Spin Physics (Q-SASP) lab
Daniel R. Hart
NASA Glenn Research Ctr. (United States)
Component analysis of devices and technologies that will be integrated to produce space instruments is needed for future NASA missions. For quantum communications, there is a need for quantum memory, quantum repeaters, single photon emitter, and detectors. For quantum sensing, extremely low Size, Weight, and Power (SWaP) and self-calibrating electrometers, magnetometers, and thermometers are needed with nano-scale resolution. NASA Glenn’s Q-SASP is developing quantum metrology capabilities in silicon carbide (SiC) to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices.
Host: Jesse Berezovsky
Biography: Dr. Daniel R. Hart is a Research Electronics Engineer at the NASA Glenn Research Center in the Optics and Photonics Branch. His work at Glenn focuses on quantum dynamics and spin physics of defects in wide band-gap semiconductors and Extreme Ultra-Violet (EUV) spectroscopy of the solar corona. He has earned an B.S. in physics at Southern University and A &M College. Also, Dr. Hart earned a M.S. in Physics and Mathematics from Southern University with thesis topic “Correlative Computational Analysis of mm-Wave and Gamma-Ray Spectrum Data from Selected Active Galaxies”. Lastly, he completed a PhD in Optical Solid-State Physics at Hampton University in Hampton, VA in laser spectroscopy of rare earth ions in solids.