In narrow-gap semiconductors, electrons have properties that are much different than in free space. For example, the effective mass in InSb is nearly two orders of magnitude smaller than the mass in free space. This property can be exploited in applications, such as magnetic read heads or ballistic transport devices, where a high mobility or a long mean free path is required. The strength of the interaction between an electrons spin and a magnetic field is also enhanced in InSb. The consequences of a small effective mass and large spin-orbit coupling are seen in far-infrared spectroscopy and charge transport measurements performed on structures with nanometer-scale dimensions in one or more directions.